Chang, Jane P

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M. Sawkar-Mathur and J.P. Chang, “Material and electrical properties of sputter-deposited HfxRuy and HfxRuyNz metals as gate electrodes for p-metal oxide semiconductors field effect transistors devices”, Journal of Applied Physics, 104, 084101, (2008)

J. Hoang, C.C. Hsu and J.P. Chang, “Feature profile evolution during shallow trench isolation etch inchlorine-based plasmas. I. Feature scale modeling”, J. Vac. Sci. Technol. B., 26 (6), 2008.

C.C. Hsu, J. Hoang, V. Le and J.P. Chang, “Feature profile evolution during shallow trench isolation etch inchlorine-based plasmas. II. Coupling reactor and feature scale models”, J. Vac. Sci. Technol. B., 26 (6), 2008.

M. Sawkar-Mathur, S. Perng, J. Lu, H.-O. Blom, J. Bargar, and J. P. Chang, “The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge,” Applied Physics Letters, 93, 233501 (2008).

J. Liu, Y. Mao, E. Lan, D. R. Banatao, G. J. Forse, J. Lu, H.-O. Blom, T. O. Yeates, B. Dunn, and J. P. Chang, “Generation of Oxide Nano-Patterns by Combining Self-Assembly of S-Layer Proteins and Area Selective Atomic Layer Deposition,” Journal of American Chemical Society, 130 (50), 16908-16913 (2008).

R. M. Martin and J. P. Chang, “Plasma Etching of Hf-based High-k Thin Films, Part I: Effect of Complex Ions and Radicals on the Surface Reactions,” Journal of Vacuum Science and Technology A 27(2), 209-216 (2009).

R. M. Martin, H.-O. Blom, and J. P. Chang, “Plasma Etching of Hf-based High-k Thin Films, Part II: Ion-enhanced Surface Reaction Mechanisms,” Journal of Vacuum Science and Technology A 27(2), 217-223 (2009).

R. M. Martin and J. P. Chang, “Plasma Etching of Hf-based High-k Thin Films, Part III: Modeling the Reaction Mechanisms,” Journal of Vacuum Science and Technology A 27(2), 224-229 (2009).